INTERNATIONAL PATENT: RAYNEXT SEMICONDUCTOR CO., LTD., 瑞砻科技股份有限公司 FILES APPLICATION FOR "SILICON CARBIDE SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR AND MANUFACTURING METHOD FOR SEMICONDUCTOR WORKING DEVICE USING SILICON CARBIDE SEMICONDUCTOR STRUCTURE"

GENEVA, Dec. 9 -- RAYNEXT SEMICONDUCTOR CO., LTD. (9F.-5, No. 168, Sec. 2, Fuxing 3rd Rd., Zhubei City, Hsinchu CountyTaiwan 302052), 瑞砻科技股份有限公司 (中国台湾省新竹县竹北市中兴里复兴三路二段168号九楼之5) filed a patent application (PCT/IB2025/054427) for "SILICON CARBIDE SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MANUFACTURING METHOD FOR SEMICONDUCTOR WORKING DEVICE USING SILICON CARBIDE SEMICONDUCTOR STRUCTURE" on Apr 29, 2025. With publication no. WO/2025/248349, the details related to the patent application was ...