INTERNATIONAL PATENT: QUALCOMM INCORPORATED FILES APPLICATION FOR "LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INTEGRATION IN INTEGRATED CIRCUIT (IC) PLATFORM"

GENEVA, Feb. 18 -- QUALCOMM INCORPORATED (Attn: International IP Administration5775 Morehouse DriveSan Diego, California 92121-1714) filed a patent application (PCT/US2024/030610) for "LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INTEGRATION IN INTEGRATED CIRCUIT (IC) PLATFORM" on May 22, 2024. With publication no. WO/2025/034278, the details related to the patent application was published on Feb 13, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): KWON, Taehun (5775 Morehouse DriveSan Diego, California 92121-1714)

Abstract: An integrated circuit (IC) device is described...