INTERNATIONAL PATENT: QUALCOMM INCORPORATED FILES APPLICATION FOR "BOTTOM CHANNEL TRENCH ISOLATED GATE ALL AROUND (GAA) FIELD EFFECT TRANSISTOR (FET)"

GENEVA, May 6 -- QUALCOMM INCORPORATED (ATTN: International IP Administration5775 Morehouse DriveSan Diego, CA 92121-1714) filed a patent application (PCT/US2024/046353) for "BOTTOM CHANNEL TRENCH ISOLATED GATE ALL AROUND (GAA) FIELD EFFECT TRANSISTOR (FET)" on Sep 12, 2024. With publication no. WO/2025/090206, the details related to the patent application was published on May 01, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LIM, Kwanyong (5775 Morehouse DriveSan Diego, CA 92121-1714), PARK, Hyunwoo (5775 Morehouse DriveSan Diego, CA 92121-1714), BAO, Junjing (5775 Morehouse DriveSan Dieg...