INTERNATIONAL PATENT: QUALCOMM INCORPORATED FILES APPLICATION FOR "BACK-CONTACTED GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES WITH A GATE THAT IS THICKER UNDER THE LOWEST CHANNEL THAN BETWEEN THE CHANNELS"

GENEVA, April 1 -- QUALCOMM INCORPORATED (ATTN: International IP Administration5775 Morehouse DriveSan Diego, California 92121-1714) filed a patent application (PCT/US2024/045392) for "BACK-CONTACTED GATE-ALL-AROUND FIELD EFFECT TRANSISTOR STRUCTURES WITH A GATE THAT IS THICKER UNDER THE LOWEST CHANNEL THAN BETWEEN THE CHANNELS" on Sep 05, 2024. With publication no. WO/2025/064228, the details related to the patent application was published on Mar 27, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): NARASIMHA, Shreesh (QUALCOMM Incorporated5775 Morehouse DriveSan Diego, California 92121-1714)...