INTERNATIONAL PATENT: PSEMI CORPORATION FILES APPLICATION FOR "T-GATE FET STRUCTURE"

GENEVA, Dec. 31 -- PSEMI CORPORATION (9369 Carroll Park DriveSan Diego, California 92121) filed a patent application (PCT/US2025/034143) for "T-GATE FET STRUCTURE" on Jun 18, 2025. With publication no. WO/2025/264790, the details related to the patent application was published on Dec 26, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SINGH, Jagar (c/o pSemi Corporation9369 Carroll Park DriveSan Diego, California 92121), REEDY, Ronald Eugene (c/o pSemi Corporation9369 Carroll Park DriveSan Diego, California 92121)

Abstract: Device structures and fabrication methods for MOSFETs having a nove...