INTERNATIONAL PATENT: PSEMI CORPORATION FILES APPLICATION FOR "FIELD-EFFECT TRANSISTOR HAVING MULTIPLE GATE OXIDE THICKNESSES"

GENEVA, March 4 -- PSEMI CORPORATION (9369 Carroll Park DriveSan Diego, California 92121) filed a patent application (PCT/US2024/042925) for "FIELD-EFFECT TRANSISTOR HAVING MULTIPLE GATE OXIDE THICKNESSES" on Aug 19, 2024. With publication no. WO/2025/042835, the details related to the patent application was published on Feb 27, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): KOUASSI, Kouassi Sebastien (c/o pSemi Corporation9369 Carroll Park DriveSan Diego, California 92121), WILLARD, Simon Edward (c/o pSemi Corporation9369 Carroll Park DriveSan Diego, California 92121), CANDRA, Panglijen (c...