INTERNATIONAL PATENT: POWER INTEGRATIONS, INC. FILES APPLICATION FOR "VERTICAL SILICON CARBIDE METAL OXIDE SEMICONDUCTOR GATE JUNCTION FIELD EFFECT TRANSISTORS"

GENEVA, March 10 -- POWER INTEGRATIONS, INC. (5245 Hellyer Ave.San Jose, California 95138) filed a patent application (PCT/US2024/042689) for "VERTICAL SILICON CARBIDE METAL OXIDE SEMICONDUCTOR GATE JUNCTION FIELD EFFECT TRANSISTORS" on Aug 16, 2024. With publication no. WO/2025/049133, the details related to the patent application was published on Mar 06, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): YANG, Kuo-Chang Robert (1859 Bucknall RoadCampbell, California 95008), VARADARAJAN, Kamal Raj (5043 Bronte Ct.Fremont, California 94538), GEORGESCU, Sorin S. (1520 Gold Finch CourtGilroy, Cal...