INTERNATIONAL PATENT: PEKING UNIVERSITY, 北京大学 FILES APPLICATION FOR "VERTICAL CHANNEL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD"

GENEVA, Feb. 7 -- PEKING UNIVERSITY (No. 5 Yiheyuan RoadHaidian District, Beijing 100871), 北京大学 (中国北京市海淀区颐和园路5号) filed a patent application (PCT/CN2024/117059) for "VERTICAL CHANNEL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD" on Sep 05, 2024. With publication no. WO/2026/025593, the details related to the patent application was published on Feb 05, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): WU, Yanqing (School Of Integrated Circuits, Peking Uni...