INTERNATIONAL PATENT: NAVITAS SEMICONDUCTOR LIMITED FILES APPLICATION FOR "SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) WITH SUPERJUNCTION AND BIFURCATED SOURCE"

GENEVA, Nov. 19 -- NAVITAS SEMICONDUCTOR LIMITED (22 Fitzwilliam Square South, Saint Peter'sDublin, D02 FH68) filed a patent application (PCT/US2025/028046) for "SILICON CARBIDE METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) WITH SUPERJUNCTION AND BIFURCATED SOURCE" on May 06, 2025. With publication no. WO/2025/235553, the details related to the patent application was published on Nov 13, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SUNDARESAN, Siddarth (c/o Navitas Semiconductor Limited22 Fitzwilliam Square South, Saint Peter'sDublin, D02 FH68)

Abstract: An embodiment of a S...