INTERNATIONAL PATENT: MURATA MANUFACTURING CO., LTD. FILES APPLICATION FOR "FET FIN AND VERTICAL NANOSHEET FORMATION USING POROUS SEMICONDUCTORS"

GENEVA, April 1 -- MURATA MANUFACTURING CO., LTD. (10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto6178555) filed a patent application (PCT/JP2024/032392) for "FET FIN AND VERTICAL NANOSHEET FORMATION USING POROUS SEMICONDUCTORS" on Sep 10, 2024. With publication no. WO/2025/063093, the details related to the patent application was published on Mar 27, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): KOUASSI, Kouassi Sebastien (c/o pSemi Corporation, 9369 Carroll Park Drive, San Diego, California92121), GOKTEPELI, Sinan (3509 Vineland Dr., Austin, Texas78722), CANDRA, Panglijen (c/o pSemi C...