INTERNATIONAL PATENT: MICROSEMI SOC CORP. FILES APPLICATION FOR "MEMORY CELL INCLUDING A READ CIRCUIT"

GENEVA, Dec. 2 -- MICROSEMI SOC CORP. (2355 W. Chandler Blvd.Chandler, Arizona 85224) filed a patent application (PCT/US2024/054379) for "MEMORY CELL INCLUDING A READ CIRCUIT" on Nov 04, 2024. With publication no. WO/2025/244674, the details related to the patent application was published on Nov 27, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): MCCOLLUM, John Lynn (174 East 2100 SouthOrem, Utah 84058), DHAOUI, Fethi (7910 East Oasis St.Mesa, Arizona 85207)

Abstract: A memory cell may include a word write line, a first bit line, a first storage node, a second storage node, a first passgate...