INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "VERTICALLY-ARRANGED GATE ALL AROUND TRANSISTORS HAVING UNIFORM CELL CONTACT LIGHTLY-DOPED DRAIN REGIONS"

GENEVA, Feb. 18 -- MICRON TECHNOLOGY, INC. (8000 South Federal Way, Post Office Box 6Boise, Idaho 83707-0006) filed a patent application (PCT/US2024/039890) for "VERTICALLY-ARRANGED GATE ALL AROUND TRANSISTORS HAVING UNIFORM CELL CONTACT LIGHTLY-DOPED DRAIN REGIONS" on Jul 26, 2024. With publication no. WO/2025/034433, the details related to the patent application was published on Feb 13, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LEE, Si-Woo (5889 E. Playwright StreetBoise, Idaho 83716), YOKOYAMA, Yuichi (3657 E Hand Cart LaneBoise, Idaho 83716), SILLS, Scott, E. (209 W. Linden StreetB...