INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "TRANSISTOR WITH CHANNEL LAYER INCLUDING HEAVILY DOPED REGION"

GENEVA, Nov. 5 -- MICRON TECHNOLOGY, INC. (8000 South Federal WayMS 525Boise, Idaho 83716) filed a patent application (PCT/US2025/025062) for "TRANSISTOR WITH CHANNEL LAYER INCLUDING HEAVILY DOPED REGION" on Apr 17, 2025. With publication no. WO/2025/226503, the details related to the patent application was published on Oct 30, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): FAYRUSHIN, Albert (3660 E. Warm Springs AvenueBoise, Idaho 83716), KAUSHIK, Naveen (6596 E. Zaffre Ridge StreetBoise, Idaho 83716), LIU, Haitao (6582 E. Escarpment CourtBoise, Idaho 83716), FUJIKI, Jun (3-30-27 Narusegao...