INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "SCULPTED SILICON FOR EPITAXIAL DIGIT LINE GROWTH IN VERTICAL THREE-DIMENSIONAL (3D) MEMORY"

GENEVA, Nov. 25 -- MICRON TECHNOLOGY, INC. (Mail Stop 5078000 South Federal WayP.O. Box 6Boise, Idaho 83707-0006) filed a patent application (PCT/US2025/024230) for "SCULPTED SILICON FOR EPITAXIAL DIGIT LINE GROWTH IN VERTICAL THREE-DIMENSIONAL (3D) MEMORY" on Apr 11, 2025. With publication no. WO/2025/240042, the details related to the patent application was published on Nov 20, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LI, Cheng (4321 E Parkcenter BlvdBoise, Idaho 83716), LIAO, Albert (1926 S Tallwood LnBoise, Idaho 83706), DAYCOCK, David A. (5346 Keybridge Dr.Boise, Idaho 83703), KA...