GENEVA, July 10 -- MICRON TECHNOLOGY, INC. (8000 South Federal WayBoise, Idaho 83707) filed a patent application (PCT/US2024/039839) for "RTT TRIM METHOD" on Jul 26, 2024. With publication no. WO/2025/144468, the details related to the patent application was published on Jul 03, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): FUJIMAKI, Ryo (c/o Micron Memory Japan, K.K,3-1-35, Minamihashimoto, Chuo-kuSagamihara, Kanagawa 252-5297)

Abstract: Systems and methods are provided for trimming RTTs in a memory device (10). The effective termination resistance (RTT) of the ODT may be adjusted by a...