INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "MICROELECTRONIC DEVICE WITH THICK CONDUCTIVE STAIRCASED STEPS FOR 3D DRAM AND RELATED SYSTEMS AND METHODS OF FORMATION"

GENEVA, April 8 -- MICRON TECHNOLOGY, INC. (8000 South Federal Way, Mailstop 1-507Boise, Idaho 83707-0006) filed a patent application (PCT/US2024/045829) for "MICROELECTRONIC DEVICE WITH THICK CONDUCTIVE STAIRCASED STEPS FOR 3D DRAM, AND RELATED SYSTEMS AND METHODS OF FORMATION" on Sep 09, 2024. With publication no. WO/2025/071901, the details related to the patent application was published on Apr 03, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LEE, Si-Woo (15185 Alondra Ln.Saratoga, California 95070), SILLS, Scott E. (1316 South Gourley StreetBoise, Idaho 83705), YOKOYAMA, Yuichi (3657 ...