INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "METHODS OF MANUFACTURING AN ELECTRONIC CIRCUIT TO INCREASE THE DEPTH OF A P-TYPE REGION OF A SILICON COLUMN DURING MANUFACTURING"

GENEVA, Feb. 11 -- MICRON TECHNOLOGY, INC. (8000 South Federal WayBoise, Idaho 83716) filed a patent application (PCT/US2025/038979) for "METHODS OF MANUFACTURING AN ELECTRONIC CIRCUIT TO INCREASE THE DEPTH OF A P-TYPE REGION OF A SILICON COLUMN DURING MANUFACTURING" on Jul 23, 2025. With publication no. WO/2026/030091, the details related to the patent application was published on Feb 05, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): FUKUZUMI, Yoshiaki (5-15-22 Bessho, Minami-kuYokohama, Kanagawa 232-0064), NAKAGAWA, Kenichiro (522-102, Ichinotsubo Nakahara-kuKawasaki-shi, Kanagawa 211-00...