INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "MEMORY DEVICE INCLUDING HIGH DENSITY CONDUCTIVE CONTACTS"

GENEVA, Dec. 17 -- MICRON TECHNOLOGY, INC. (8000 So. Federal WayBoise, Idaho 83716-9632) filed a patent application (PCT/US2025/032299) for "MEMORY DEVICE INCLUDING HIGH DENSITY CONDUCTIVE CONTACTS" on Jun 04, 2025. With publication no. WO/2025/255251, the details related to the patent application was published on Dec 11, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LIST, Tyler (909 N Marshall StBoise, 83706), GUPTA, Sidhartha (2963 S. Shadywood WayBoise, Idaho 83716)

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes: l...