INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "MEMORY BUILT-IN SELF-TEST (MBIST) FOR A MEMORY EXPANSION OF A HIGH-BANDWIDTH MEMORY (HBM) DEVICE"

GENEVA, Jan. 20 -- MICRON TECHNOLOGY, INC. (8000 S. Federal Way, P.O. Box 6Boise, ID 83707-0006) filed a patent application (PCT/US2025/036460) for "MEMORY BUILT-IN SELF-TEST (MBIST) FOR A MEMORY EXPANSION OF A HIGH-BANDWIDTH MEMORY (HBM) DEVICE" on Jul 03, 2025. With publication no. WO/2026/015390, the details related to the patent application was published on Jan 15, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): AYYAPUREDDI, Sujeet (c/o Micron Technology, Inc.8000 S. Federal Way, P.O. Box 6Boise, ID 83707-0006)

Abstract: This present invention relates to an HBM device with an MBIST engi...