INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "EPITAXIAL GROWTH FOR SUBSTRATE ISOLATION IN A THREE DIMENSIONAL (3D) MEMORY ARRAY"

GENEVA, Feb. 4 -- MICRON TECHNOLOGY, INC. (Mail Stop 5078000 South Federal WayP.O. Box 6Boise, Idaho 83707-0006) filed a patent application (PCT/US2025/036262) for "EPITAXIAL GROWTH FOR SUBSTRATE ISOLATION IN A THREE DIMENSIONAL (3D) MEMORY ARRAY" on Jul 02, 2025. With publication no. WO/2026/024441, the details related to the patent application was published on Jan 29, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): TAREKEGN, Eyob (8000 South Federal WayBoise, Idaho 83716), DAYCOCK, David A. (5346 Keybridge Dr.Boise, Idaho 83703), YASTREBENETSKY, Kolya (6982 E Ghost Bar StBoise, Idaho 83716...