INTERNATIONAL PATENT: MICRON TECHNOLOGY, INC. FILES APPLICATION FOR "DIFFERENTIATING READ DISTURB FROM RETENTION CHARGE LOSS"

GENEVA, Jan. 27 -- MICRON TECHNOLOGY, INC. (8000 So. Federal WayBoise, Idaho 83716-9632) filed a patent application (PCT/US2025/036473) for "DIFFERENTIATING READ DISTURB FROM RETENTION CHARGE LOSS" on Jul 03, 2025. With publication no. WO/2026/019582, the details related to the patent application was published on Jan 22, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LIAO, Dongxiang (7429 Stanford PlaceCupertino, California 95014), ZHANG, Daniel (1639 Yosemite DrMilpitas, California 95035)

Abstract: Systems and methods for providing a memory sub-system controller selectively refresh data b...