INTERNATIONAL PATENT: MAXPOWER SEMICONDUCTOR, INC. FILES APPLICATION FOR "SELF-ALIGNED SOURCE CONTACT FOR SIC SWITCH UTILIZING OXIDATION RATE DIFFERENCE BETWEEN POLY-SI AND SIC"

GENEVA, July 30 -- MAXPOWER SEMICONDUCTOR, INC. (181 Metro DriveSuite 590San Jose, California 95110) filed a patent application (PCT/US2025/011697) for "SELF-ALIGNED SOURCE CONTACT FOR SIC SWITCH UTILIZING OXIDATION RATE DIFFERENCE BETWEEN POLY-SI AND SIC" on Jan 15, 2025. With publication no. WO/2025/155612, the details related to the patent application was published on Jul 24, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ZENG, Jun (2017 Huntington LN ARedondo Beach, California 90278), SU, Shih-Tzung (3252 Dalemead StreetTorrance, California 90505), DARWISH, Mohamed N. (675 Regas DriveCa...