INTERNATIONAL PATENT: LIONIX INTERNATIONAL BV FILES APPLICATION FOR "METHOD FOR FORMING A LAYER OF SILICON DIOXIDE ON A LAYER OF SILICON NITRIDE"

GENEVA, Aug. 25 -- LIONIX INTERNATIONAL BV (PO Box 4567500 AL Enschede) filed a patent application (PCT/IB2025/051652) for "METHOD FOR FORMING A LAYER OF SILICON DIOXIDE ON A LAYER OF SILICON NITRIDE" on Feb 14, 2025. With publication no. WO/2025/172952, the details related to the patent application was published on Aug 21, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): FALKE, Floris (PO Box 4567500 AL Enschede)

Abstract: In accordance with a method of forming a waveguide on a substrate, a lower core silicon nitride layer is formed on a lower cladding layer disposed on a substrate. The s...