INTERNATIONAL PATENT: LAM RESEARCH CORPORATION FILES APPLICATION FOR "SILICON OXIDE ETCH WITH NITROGEN CONTAINING ETCH COMPONENT"

GENEVA, Oct. 20 -- LAM RESEARCH CORPORATION (4650 Cushing ParkwayFremont, California 94538) filed a patent application (PCT/US2025/021186) for "SILICON OXIDE ETCH WITH NITROGEN CONTAINING ETCH COMPONENT" on Mar 24, 2025. With publication no. WO/2025/216868, the details related to the patent application was published on Oct 16, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): HUDSON, Eric (c/o Lam Research Corporation4650 Cushing Parkway, M/S CA-1Fremont, California 94538), BELAU, Leonid (c/o Lam Research Corporation4650 Cushing Parkway, M/S CA-1Fremont, California 94538), MACKIE, Neil Macarae...