INTERNATIONAL PATENT: LAM RESEARCH CORPORATION FILES APPLICATION FOR "SELECTIVE ETCH OF STACK USING A HYDROGEN CONTAINING COMPONENT AND AT LEAST ONE OF SEF6 AND IF7 AND TEF6"

GENEVA, June 12 -- LAM RESEARCH CORPORATION (4650 Cushing ParkwayFremont, California 94538) filed a patent application (PCT/US2024/056745) for "SELECTIVE ETCH OF STACK USING A HYDROGEN CONTAINING COMPONENT AND AT LEAST ONE OF SeF6, AND IF7 AND TeF6 " on Nov 20, 2024. With publication no. WO/2025/117301, the details related to the patent application was published on Jun 05, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): WANG, Mingmei (c/o Lam Research Corporation4650 Cushing Parkway, M/S CA-1Fremont, California 94538), OH, Youn-Jin (c/o Lam Research Corporation4650 Cushing Parkway, M/S CA-1...