INTERNATIONAL PATENT: LAM RESEARCH CORPORATION FILES APPLICATION FOR "AN IN-SITU RUTHENIUM OR COBALT LINER FOR IMPROVED HIGH ASPECT RATIO ETCH WITH BOW CONTROL"

GENEVA, Aug. 26 -- LAM RESEARCH CORPORATION (4650 Cushing ParkwayFremont, California 94538) filed a patent application (PCT/US2025/015828) for "AN IN-SITU RUTHENIUM OR COBALT LINER FOR IMPROVED HIGH ASPECT RATIO ETCH WITH BOW CONTROL" on Feb 13, 2025. With publication no. WO/2025/175032, the details related to the patent application was published on Aug 21, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): BELAU, Leonid (c/o Lam Research Corporation4650 Cushing Parkway, M/S CA-1Fremont, California 94538)

Abstract: A method of etching recessed features in a stack below a mask is provided. An...