INTERNATIONAL PATENT: KOREA ADVANCED NANO FAB CENTER, (재)한국나노기술원 FILES APPLICATION FOR "METHOD FOR MANUFACTURING HIGH-INTEGRATION SEMICONDUCTOR DEVICE BY USING SELECTIVE TRANSFER AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY"

GENEVA, June 24 -- KOREA ADVANCED NANO FAB CENTER ((lui-dong) 109, Gwanggyo-ro, Yeongtong-guSuwon-siGyeonggi-do 16229), (재)한국나노기술원 (경기도수원시영통구 광교로 109 (이의동)) filed a patent application (PCT/KR2024/018716) for "METHOD FOR MANUFACTURING HIGH-INTEGRATION SEMICONDUCTOR DEVICE BY USING SELECTIVE TRANSFER, AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY" on Nov 25, 2024. With publication no. WO/2025/127494, the details related to the patent application was published on Jun 19, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, whi...