INTERNATIONAL PATENT: JSR CORPORATION, ＪＳＲ株式会社 FILES APPLICATION FOR "SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM"

GENEVA, Aug. 18 -- JSR CORPORATION (9-2, Higashi-Shinbashi 1-chome, Minato-ku, Tokyo1058640), ＪＳＲ株式会社 (東京都港区東新橋一丁目９番２号) filed a patent application (PCT/JP2025/002896) for "SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM" on Jan 30, 2025. With publication no. WO/2025/169821, the details related to the patent application was published on Aug 14, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SAKAI...