INTERNATIONAL PATENT: JSR CORPORATION, ＪＳＲ株式会社 FILES APPLICATION FOR "METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR PRODUCING NITROGEN-CONTAINING COMPOUND"

GENEVA, Sept. 30 -- JSR CORPORATION (9-2, Higashi-Shinbashi 1-chome, Minato-ku, Tokyo1058640), ＪＳＲ株式会社 (東京都港区東新橋一丁目９番２号) filed a patent application (PCT/JP2025/007929) for "METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND METHOD FOR PRODUCING NITROGEN-CONTAINING COMPOUND" on Mar 05, 2025. With publication no. WO/2025/197551, the details related to the patent application was published on Sep 25, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World In...