INTERNATIONAL PATENT: JSR CORPORATION, ＪＳＲ株式会社 FILES APPLICATION FOR "COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND POLYMER"

GENEVA, Jan. 27 -- JSR CORPORATION (9-2, Higashi-Shinbashi 1-chome, Minato-ku, Tokyo1058640), ＪＳＲ株式会社 (東京都港区東新橋一丁目９番２号) filed a patent application (PCT/JP2025/024638) for "COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND POLYMER" on Jul 09, 2025. With publication no. WO/2026/018754, the details related to the patent application was published on Jan 22, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

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