INTERNATIONAL PATENT: JIANGSU INSTITUTE OF ADVANCED SEMICONDUCTORS, 江苏第三代半导体研究院有限公司 FILES APPLICATION FOR "ELEMENT CONCENTRATION TESTING METHOD BASED ON TESTING DEVICE AND ELECTRONIC DEVICE"

Posted On: 2026-02-16

GENEVA, Feb. 16 -- JIANGSU INSTITUTE OF ADVANCED SEMICONDUCTORS (NE-38, Nanopolis Suzhou, No.99 Jinji Lake Avenue, SIPSuzhou, Jiangsu 215125), 江苏第三代半导体研究院有限公司 (中国江苏省苏州市苏州工业园区金鸡湖大道99号苏州纳米城东北区38幢) filed a patent application (PCT/CN2025/083995) for "ELEMENT CONCENTRATION TESTING METHOD BASED ON TESTING DEVICE, AND ELECTRONIC DEVICE" on Mar 21, 2025. With publication no. WO/2026/031568, the details related to the patent application was publis...

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INTERNATIONAL PATENT: JIANGSU INSTITUTE OF ADVANCED SEMICONDUCTORS, 江苏第三代半导体研究院有限公司 FILES APPLICATION FOR "ELEMENT CONCENTRATION TESTING METHOD BASED ON TESTING DEVICE AND ELECTRONIC DEVICE"