INTERNATIONAL PATENT: IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), 한양대학교 산학협력단 FILES APPLICATION FOR "METHOD FOR DESIGNING ATOMIC LAYER DEPOSITION PROCESS FOR MANUFACTURING AMORPHOUS OXIDE SEMICONDUCTOR MATERIAL FILM AND AMORPHOUS IGZO MATERIAL FILM MANUFACTURED USING SAME"

GENEVA, Feb. 4 -- IUCF-HYU(INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (222, Wangsimni-roSeongdong-guSeoul 04763), 한양대학교 산학협력단 (서울특별시성동구왕십리로 222) filed a patent application (PCT/KR2025/010926) for "METHOD FOR DESIGNING ATOMIC LAYER DEPOSITION PROCESS FOR MANUFACTURING AMORPHOUS OXIDE SEMICONDUCTOR MATERIAL FILM AND AMORPHOUS IGZO MATERIAL FILM MANUFACTURED USING SAME" on Jul 23, 2025. With publication no. WO/2026/024093, the details related to the patent application was published on Jan 29, 2026.

Notably, the patent application was submitted under the International Pate...