GENEVA, July 14 -- IQE PLC (Pascal CloseSt MellonsCardiff CF3 0LW) filed a patent application (PCT/EP2024/086663) for "HIGH ELECTRON MOBILITY TRANSISTORS" on Dec 16, 2024. With publication no. WO/2025/146346, the details related to the patent application was published on Jul 10, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): GOKTEPELI, Sinan (c/o IQE plcPascal CloseSt MellonsCardiff Gwent CF3 0LW)

Abstract: A semiconductor structure comprises a high electron mobility transistor (HEMT) comprising: a channel layer (110) comprising a first surface (112) and a barrier layer (120). The semico...