INTERNATIONAL PATENT: INTEL CORPORATION FILES APPLICATION FOR "LARGE GRAIN AND HALOGEN-FREE SILICON CELL CHANNEL FOR 3D NAND STRING"

GENEVA, March 25 -- INTEL CORPORATION (2200 Mission College Blvd.Santa Clara, California 95054) filed a patent application (PCT/US2024/041803) for "LARGE GRAIN AND HALOGEN-FREE SILICON CELL CHANNEL FOR 3D NAND STRING" on Aug 09, 2024. With publication no. WO/2025/058749, the details related to the patent application was published on Mar 20, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): KACHIAN, Jessica (71 Patrick WayHalf Moon Bay, California 94019)

Abstract: An example of an apparatus may include an array of linear cell channels and a string of NAND memory cells arranged along a cell c...