INTERNATIONAL PATENT: INSTITUTE OF MICROELECTRONICS,CHINESE ACADEMY OF SCIENCES, 中国科学院微电子研究所 FILES APPLICATION FOR "OPTIMIZATION METHOD AND APPARATUS FOR OXIDE-BASED RESISTIVE RANDOM ACCESS MEMORY AND RETENTION TEST METHOD AND APPARATUS FOR OXIDE-BASED RESISTIVE RANDOM ACCESS MEMORY"

GENEVA, May 4 -- INSTITUTE OF MICROELECTRONICS , CHINESE ACADEMY OF SCIENCES (No.3 Beitucheng West RoadChaoyang District, Beijing 100029), 中国科学院微电子研究所 (中国北京市朝阳区北土城西路3号) filed a patent application (PCT/CN2023/126123) for "OPTIMIZATION METHOD AND APPARATUS FOR OXIDE-BASED RESISTIVE RANDOM ACCESS MEMORY, AND RETENTION TEST METHOD AND APPARATUS FOR OXIDE-BASED RESISTIVE RANDOM ACCESS MEMORY" on Oct 24, 2023. With publication no. WO/2025/086082, the details related to the patent application was published on May 01, 2025.

Notably, the patent application was submitted under ...