INTERNATIONAL PATENT: INNOSTAR SEMICONDUCTOR (SHANGHAI) CO., LTD., 昕原半导体（上海）有限公司 FILES APPLICATION FOR "RESISTIVE RANDOM-ACCESS MEMORY AND PREPARATION METHOD FOR RESISTIVE RANDOM-ACCESS MEMORY"

Posted On: 2025-06-02

GENEVA, June 2 -- INNOSTAR SEMICONDUCTOR (SHANGHAI) CO., LTD. (Room 304, Building 13, No. 1211 Hongyin Road, Lingang New Area, China (Shanghai) Pilot Free Trade ZonePudong New District, Shanghai 201306), 昕原半导体（上海）有限公司 (中国上海市浦东新区中国（上海）自由贸易试验区临港新片区鸿音路1211号13幢304室) filed a patent application (PCT/CN2024/126375) for "RESISTIVE RANDOM-ACCESS MEMORY AND PREPARATION METHOD FOR RESISTIVE RANDOM-ACCESS MEMORY" on Oct 22, 2024. With p...

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INTERNATIONAL PATENT: INNOSTAR SEMICONDUCTOR (SHANGHAI) CO., LTD., 昕原半导体（上海）有限公司 FILES APPLICATION FOR "RESISTIVE RANDOM-ACCESS MEMORY AND PREPARATION METHOD FOR RESISTIVE RANDOM-ACCESS MEMORY"