INTERNATIONAL PATENT: INDIAN INSTITUTE OF SCIENCE FILES APPLICATION FOR "METHOD FOR HIGH THRESHOLD VOLTAGE AND HIGH BREAKDOWN GATE STACK IN P-GAN GATE E-MODE HEMTS"

GENEVA, March 17 -- INDIAN INSTITUTE OF SCIENCE (C V Raman Road, BangaloreKarnataka 560012) filed a patent application (PCT/IB2024/060965) for "METHOD FOR HIGH THRESHOLD VOLTAGE AND HIGH BREAKDOWN GATE STACK IN P-GAN GATE E-MODE HEMTS" on Nov 06, 2024. With publication no. WO/2025/052363, the details related to the patent application was published on Mar 13, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): MALIK, Rasik Rashid (Department of Electronic Systems EngineeringIndian Institute of ScienceC V Raman RoadBangalore, Karnataka 560012), SHRIVASTAVA, Mayank (Department of Electronic Systems...