INTERNATIONAL PATENT: IMEC VZW FILES APPLICATION FOR "2D CHANNEL FIELD-EFFECT TRANSISTOR DEVICE"

GENEVA, June 23 -- IMEC VZW (Kapeldreef 753001 Leuven) filed a patent application (PCT/EP2024/086185) for "2D CHANNEL FIELD-EFFECT TRANSISTOR DEVICE" on Dec 13, 2024. With publication no. WO/2025/125554, the details related to the patent application was published on Jun 19, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): MORIN, Pierre (c/o IMEC VZWpatent departmentKapeldreef 753001 Leuven)

Abstract: There is provided a method for forming a 2D channel field-effect transistor device (10). The method comprising: forming a device structure (100) comprising: a device layer stack (103) comprisi...