INTERNATIONAL PATENT: GLOBALWAFERS CO., LTD. FILES APPLICATION FOR "METHODS FOR TUNABLE DIELECTRIC THICKNESS OF A SEMICONDUCTOR SUBSTRATE USING BACK SURFACE HEATING"

GENEVA, Jan. 20 -- GLOBALWAFERS CO., LTD. (No. 8, Industrial East Road 2Science-Based Industrial Park30075 Hsinchu City) filed a patent application (PCT/US2025/037223) for "METHODS FOR TUNABLE DIELECTRIC THICKNESS OF A SEMICONDUCTOR SUBSTRATE USING BACK SURFACE HEATING" on Jul 11, 2025. With publication no. WO/2026/015770, the details related to the patent application was published on Jan 15, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LIN, WangHua (c/o GlobalWafers Co., Ltd.No. 2 Creation Road 1Science-Based Industrial ParkHsinchu City, 30075), CHEN, Dong-Peng (c/o GlobalWafers Co., Ltd...