INTERNATIONAL PATENT: GANPOWER INTERNATIONAL, INC. FILES APPLICATION FOR "METHODS AND CIRCUITS FOR A SWITCHING FLOATING SUBSTRATE OF A GALLIUM NITRIDE FIELD EFFECT TRANSISTOR"

GENEVA, Aug. 4 -- GANPOWER INTERNATIONAL, INC. (230-3410 Lougheed HighwayVancouver, British Columbia V5M 2A4) filed a patent application (PCT/IB2025/050712) for "METHODS AND CIRCUITS FOR A SWITCHING FLOATING SUBSTRATE OF A GALLIUM NITRIDE FIELD EFFECT TRANSISTOR" on Jan 23, 2025. With publication no. WO/2025/158318, the details related to the patent application was published on Jul 31, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LI, Zhanming (c/o GaNPOWER INTERNATIONAL, INC.187 Stevens DriveWest Vancouver, British Columbia V7S 1C3)

Abstract: A gallium nitride field effect transistor (...