INTERNATIONAL PATENT: FUJIFILM CORPORATION, FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. FILES APPLICATION FOR "METHOD OF MANUFACTURING TREATED SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR"

GENEVA, May 27 -- FUJIFILM CORPORATION (26-30, Nishiazabu 2-chome, Minato-ku, Tokyo1068620), FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (80 Circuit Drive, North Kingstown Rhode Island02852) filed a patent application (PCT/JP2024/038265) for "METHOD OF MANUFACTURING TREATED SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR" on Oct 28, 2024. With publication no. WO/2025/105151, the details related to the patent application was published on May 22, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): SATO Koichi (c/o FUJIFILM Corporation, 4000, Kawashiri, Yoshida-cho, Haibara-gun, Shizuoka4210396)...