GENEVA, Sept. 16 -- EPINOVATECH AB (Gate 4Ideon Gateway, Sheelevagen 27223 63 Lund) filed a patent application (PCT/EP2025/056357) for "A SEMICONDUCTOR STRUCTURE WITH STRAINED BOTTOM LAYER" on Mar 07, 2025. With publication no. WO/2025/186470, the details related to the patent application was published on Sep 11, 2025.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
Inventor(s): OLSSON, Martin Andreas (c/o Epinovatech ABGate 4Ideon Gateway, Sheelevagen 27223 63 Lund)
Abstract:
The present invention relates to a semiconductor structure, and a method for producing such structure. The structure comprises: a su...