GENEVA, March 31 -- ELMOS SEMICONDUCTOR SE (Heinrich-Hertz-Str. 144227 Dortmund) filed a patent application (PCT/EP2024/076261) for "METHOD FOR THE CREATION OF DEEP-LYING P-N TRANSITIONS IN A BCD PROCESS, BCD SUBSTRATE, AND SINGLE-PHOTON AVALANCHE DIODE BASED THEREON" on Sep 19, 2024. With publication no. WO/2025/061844, the details related to the patent application was published on Mar 27, 2025.
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
Inventor(s): ROTTER, Thomas (Tennenbachweg 2b91077 Neunkirchen am Brand), KOLBEL, Julia (Dorotheenstr. 544137 Dortmund)
Abstract:
The present invention relates to a m...