INTERNATIONAL PATENT: DIODES INCORPORATED FILES APPLICATION FOR "POWER MOSFET WITH GATE-SOURCE ESD DIODE STRUCTURE"

GENEVA, July 30 -- DIODES INCORPORATED (4949 Hedgcoxe Road, Suite 200Plano, Texas 75024) filed a patent application (PCT/US2024/029538) for "POWER MOSFET WITH GATE-SOURCE ESD DIODE STRUCTURE" on May 15, 2024. With publication no. WO/2025/155329, the details related to the patent application was published on Jul 24, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): KAI, Wan-Yu (7F., No. 50, Minquan RoadXindian DistrictNew Taipei City, 231023), HU, Chia-Wei (7F., No. 50, Minquan RoadXindian DistrictNew Taipei City, 231023), KUO, Ta-Chuan (7F., No. 50, Minquan RoadXindian DistrictNew Taipei City,...