INTERNATIONAL PATENT: DAI, QIYOU, 戴祺又 FILES APPLICATION FOR "METHOD FOR PREPARING MULTI-ELEMENT-DOPED INTERDEPENDENT ZINC OXIDE WHISKER-BASED HIGH-CONDUCTIVITY AND HIGH-DENSITY SPUTTERING TARGET MATERIAL AND PRODUCT THEREOF"

GENEVA, Aug. 17 -- DAI, Qiyou (No. 4, Floor 1, Unit 3, Building B, No. 2, Xiaofuqiao Street, Fucheng DistrictMianyang, Sichuan 621000), 戴祺又 (中国四川省绵阳市涪城区小浮桥街2号B幢3单元1楼4号) filed a patent application (PCT/CN2024/118409) for "METHOD FOR PREPARING MULTI-ELEMENT-DOPED INTERDEPENDENT ZINC OXIDE WHISKER-BASED HIGH-CONDUCTIVITY AND HIGH-DENSITY SPUTTERING TARGET MATERIAL AND PRODUCT THEREOF" on Sep 12, 2024. With publication no. WO/2025/167104, the details related to the patent application was published on Aug 14, 2025.

Notably, the patent application was submitted under the Internati...