INTERNATIONAL PATENT: CHENGDU PBM TECHNOLOGY LTD., 成都皮兆永存科技有限公司 FILES APPLICATION FOR "METHOD FOR DOPING SIDE WALL OF 3D MEMORY DEVICE"

GENEVA, Feb. 8 -- CHENGDU PBM TECHNOLOGY LTD. (No. 3, 11th Floor, Unit 1, Building 5, No. 399 Fucheng Avenue West, High Tech ZoneChengdu, Sichuan 610000), 成都皮兆永存科技有限公司 (中国四川省成都市高新区府城大道西段399号5栋1单元11层3号) filed a patent application (PCT/CN2025/090638) for "METHOD FOR DOPING SIDE WALL OF 3D MEMORY DEVICE" on Apr 23, 2025. With publication no. WO/2026/026042, the details related to the patent application was published on Feb 05, 2026.

Notably, the patent application was submitted under the International ...