INTERNATIONAL PATENT: CHANGXIN MEMORY TECHNOLOGIES,INC., 长鑫存储技术有限公司 FILES APPLICATION FOR "SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREFOR"

GENEVA, May 18 -- CHANGXIN MEMORY TECHNOLOGIES , INC. (No. 388, Xingye Avenue, Airport Industrial Park, Economic And Technological Development AreaHefei, Anhui 230601), 长鑫存储技术有限公司 (中国安徽省合肥市经济技术开发区空港工业园兴业大道388号) filed a patent application (PCT/CN2023/110953) for "SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREFOR" on Aug 03, 2023. With publication no. WO/2024/098851, the details related to the patent application was published on May 16, 2024.

Notably, the patent application was submitted under the I...