INTERNATIONAL PATENT: CAMBRIDGE GAN DEVICES LIMITED FILES APPLICATION FOR "III-NITRIDE TRANSISTOR COMPRISING A PLURALITY OF ISOLATION REGIONS"

GENEVA, Sept. 16 -- CAMBRIDGE GAN DEVICES LIMITED (Jeffreys Building, Suite 8St Johns Innovation ParkCambridge Cambridgeshire CB4 0DS) filed a patent application (PCT/GB2025/050360) for "III-NITRIDE TRANSISTOR COMPRISING A PLURALITY OF ISOLATION REGIONS" on Feb 25, 2025. With publication no. WO/2025/186537, the details related to the patent application was published on Sep 11, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): UDREA, Florin (c/o Cambridge GaN Devices LtdJeffreys Building, Suite 8St Johns Innovation Park, Cowley RoadCambridge, Cambridgeshire CB4 0DS), EFTHYMIOU, Loizos (c/o Camb...