INTERNATIONAL PATENT: BAR-ILAN UNIVERSITY FILES APPLICATION FOR "PASSIVELY MODE-LOCKED BROAD-AREA SEMICONDUCTOR LASER GENERATING ULTRASHORT PULSES OF HIGH ENERGY AND HIGH BRIGHTNESS"

GENEVA, Oct. 13 -- BAR-ILAN UNIVERSITY (5290002 Ramat Gan) filed a patent application (PCT/IL2025/050298) for "PASSIVELY MODE-LOCKED BROAD-AREA SEMICONDUCTOR LASER GENERATING ULTRASHORT PULSES OF HIGH ENERGY AND HIGH BRIGHTNESS" on Apr 03, 2025. With publication no. WO/2025/210638, the details related to the patent application was published on Oct 09, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): PEER, Avraham (6 Hazafzafa St.7420929 Ness Ziona), PARSHANI, Idan (65 HaShir St.7194600 Bruchin), MELLER, Mallachi (2 Lohamei HaGhetto St.4965102 Petach Tikva)

Abstract: A mode-locked semiconduct...