INTERNATIONAL PATENT: APPLIED MATERIALS, INC. FILES APPLICATION FOR "STORAGE NODE CONTACT (SNC) JUNCTION FORMATION FOR THREE-DIMENSIONAL DYNAMIC RANDOM ACCESS MEMORY (DRAM)"

GENEVA, March 4 -- APPLIED MATERIALS, INC. (3050 Bowers AvenueSanta Clara, California 95054) filed a patent application (PCT/US2024/039210) for "STORAGE NODE CONTACT (SNC) JUNCTION FORMATION FOR THREE-DIMENSIONAL DYNAMIC RANDOM ACCESS MEMORY (DRAM)" on Jul 23, 2024. With publication no. WO/2025/042532, the details related to the patent application was published on Feb 27, 2025.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): CHEN, Zhijun (c/o Applied Materials, Inc., Law Dept., M/S 12693050 Bowers AvenueSanta Clara, California 95054), FISHBURN, Fredrick (c/o Applied Materials, Inc., Law Dept., M/S...